maximum ratings all ratings: t c = 25c unless otherwise specified. apt12045l2vfr 1200v 28a 0.450 ?? ?? ? caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com power mos v ? 050-5844 rev a 4-2004 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage to-264 max to-264 max fredfet g d s characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 14a) zero gate voltage drain current (v ds = 1200, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1200 0.450 250 1000 100 24 apt12045l2vfr 1200 28 112 3040 833 6.67 -55 to 150 300 2850 3200 downloaded from: http:///
dynamic characteristics apt12045l2vfr 050-5844 rev a 4-2004 z jc , thermal impedance (c/w) 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 8.16mh, r g = 25 ? , peak i l = 28a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s i d [cont.], di / dt = 100a/s, t j 150c, r g = 2.0 ? v r = 200v. apt reserves the right to change, without notice, the specifications and information contained herein. source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 28a) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d 28a, di / dt = 100a/s) reverse recovery charge(i s = -i d 28a, di / dt = 100a/s) peak recovery current(i s = -i d 28a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 600v i d = 28a @ 25c v gs = 15v v dd = 600v i d = 28a @ 25c r g = 0.6 ? unit pf nc ns min typ max 28 112 1.3 18 t j = 25c 310 t j = 125c 625 t j = 25c 2 t j = 125c 6 t j = 25c 14 t j = 125c 24 thermal characteristics symbol r jc r ja min typ max 0.15 40 unitc/w characteristicjunction to case junction to ambient min typ max 11370 950495 605 42 310 1615 85 14 downloaded from: http:///
050-5844 rev a 4-2004 apt12045l2vfr typical performance curves 4v 4.5v 5v 5.5 v gs =15v, 10v, 8v & 6v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figu re 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 1 2 3 4 5 6 0 10 20 30 40 50 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 6050 40 30 20 10 0 1.41.3 1.2 1.1 1.0 0.090.08 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 typical performance curves 8070 60 50 40 30 20 10 0 3025 20 15 10 50 2.52.0 1.5 1.0 0.5 0.0 normalized to v gs = 10v @ i d = 14a i d = 14a v gs = 10v 0.03670.0923 0.0215 0.0627f0.761f 50.8f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
apt12045l2vfr 050-5844 rev a 4-2004 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) t j =+150c t j =+25c c rss c iss c oss 10ms 1 5 10 50 100 500 1200 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 0.3 0.5 0.7 0.9 1.1 1.3 1.5 112 5010 51 1210 86 4 2 0 50,00010,000 5,0001,000 500100 200 100 5010 51 typical performance curves i d = 28a v ds =600v v ds =240v v ds =960v to-264 max tm (l2) package outline 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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